7 2 / 3 o d v w l f ( q f d s v x o d w h 7 u d q v l v w r u v 0 - ' transistor (npn) ) ( $ 7 8 5 ( 6 z designed for general purpose amplifier an d low speed s witching applications z electrically simiar to mje3055 z dc current gain specified to10a 0 $ ; , 0 8 0 5 $ 7 , 1 * 6 7 d x q o h v v r w k h u z l v h q r w h g 6 \ p e r o 3 d u d p h w h u 9 d o x h 8 q l w 9 & % 2 collector-base voltage 70 v 9 & ( 2 collector-emitter voltage 60 v 9 ( % 2 emitter-base voltage 5 v , & collector current -continuous 10 a 3 & collector power dissipation 1.25 w 7 - junction temperature 150 7 v w j storage temperature -55-150 ( / ( & 7 5 , & $ / & + $ 5 $ & 7 ( 5 , 6 7 , & 6 7 d x q o h v v r w k h u z l v h v s h f l i l h g 3 d u d p h w h u 6 \ p e r o 7 h v w f r q g l w l r q v 0 l q 7 \ s 0 d [ 8 q l w & r o o h f w r u e d v h e u h d n g r z q y r o w d j h v (br)cbo ic=1ma,i e =0 70 v & r o o h f w r u h p l w w h u e u h d n g r z q y r o w d j h v (br)ceo ic=200 ma,i b =0 60 v ( p l w w h u e d v h e u h d n g r z q y r o w d j h v (br)ebo i e =1ma,i c =0 5 v i cbo v cb =70v,i e =0 0.02 ma & r o o h f w r u f x w r i i f x u u h q w i ceo v cb =30v,i b =0 50 a ( p l w w h u f x w r i i f x u u h q w i ebo v eb =5v,i c =0 0.5 ma h fe(1) v ce =4v,i c =4a 20 100 ' & f x u u h q w j d l q h fe(2) v ce =4v,i c =10a 5 v ce(sat)(1) i c =4a, i b =0.4a 1.1 v & r o o h f w r u h p l w w h u v d w x u d w l r q y r o w d j h v ce(sat)(2) i c =10a, i b =3.3a 8 v % d v h h p l w w h u y r o w d j h v be v ce =4v, i c =4a 1.8 v 7 u d q v l w l r q i u h t x h q f \ f t v ce =10v,i c =0.5a,f=500kh z 2 mhz 7 2 / 1.base 2.collector 3.emitter 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,sep,2013
0.1 1 10 1 10 100 1000 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 100 200 300 400 500 600 10 12 14 16 18 20 11 0 1 10 100 1000 0.1 1 10 0.0 0.3 0.6 0.9 1.2 1.5 1.8 0123456 0 1 2 3 4 5 6 100 1000 0.1 11 0 0.0 0.4 0.8 1.2 1.6 h fe i c common emitter v ce =4v t a =25 t a =100 dc current gain h fe collector current i c (a) p c t a collector power dissipation pc (w) ambient temperature t a ( ) f t i c transition frequency f t (mhz) collector current i c (ma) 0.5 f=1mhz i e =0/ i c =0 t a =25 30 v cb / v eb c ob / c ib c ob c ib capacitance c (pf) reverse voltage v (v) =10 v besat i c t a =100 t a =25 base-emitter saturation voltage v besat (v) collector current i c (a) common emitter t a =25 static characteristic collector current i c (a) collector-emitter voltage v ce (v) 60ma 54ma 48ma 42ma 36ma 30ma 24ma 18ma 12ma i b =6ma 3000 10 1 common emitter v ce =4v t a =100 t a =25 collector current i c (a) base-emmiter voltage v be (mv) mjd3055 i c v be 0.3 v cesat i c collector-emitter saturation voltage v cesat (v) collector current i c (a) =10,t a =25 =3,t a =25 =10,t a =100 =3,t a =100 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,sep,2013
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